HFS2N60

HFS2N60 July 2005 BVDSS = 600 V HFS2N60 600V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ.) ) RDS(on) typ = 4.0 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 2.0* 1.3* 6.0* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 120 20 2.0 5.4 5.5 23 0.18 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 5.5 62.5 ℃/W Units ◎ SEMIHOW REV.A0,July 2005 Free Datasheet http://www.0PDF.com HFS2N60 Electrical Characteristics TC=25 °C Symbol y Parameter unless...