internally clamped IGBT
®
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB10NB37LZ
s s s s s s
V CES CLA...
Description
®
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB10NB37LZ
s s s s s s
V CES CLAMPED
V CE(s at) < 1.8 V
IC 10 A
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
3 1
DESCRIPTION Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION
D2PAK TO-263
INTERNAL SCHEMATIC DIAGRAM
s
ABSOLUTE MAXIMUM RATINGS
Symb ol V CES V ECR V GE IC IC I CM ( ) P tot E SD T s tg Tj June 1999 Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor ESD (Human Body Model) Storage T emperature Max. Operating Junction Temperature
o o o
Value CLAMPED 18 CLAMPED 20 20 60 125 0.83 4 -65 to 175 175
Un it V V V A A A W W /o C KV
o o
C C 1/8
() Pulse width limited by safe operating area
Free Datasheet http://www.0PDF.com
STGB10NB37LZ
THERMAL DATA
R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal ...
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