SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRA2...
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRA221~KRA226
EPITAXIAL PLANAR
PNP TRANSISTOR
B
C
FEATURES
With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Output Current :-800mA.
K D G E N A
H F F
EQUIVALENT CIRCUIT
OUT R1 R2
BIAS RESISTOR VALUES
TYPE NO. KRA221
L
R1(k 1 2.2 4.7 10 1 2.2
)
R2(k 1 2.2 4.7 10 10 10
)
M
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. COLLECTOR 3. BASE
IN
KRA222 KRA223 KRA224
COMMON(+)
TO-92
KRA225 KRA226
MAXIMUM RATING (Ta=25
)
SYMBOL KRA221 226 VO RATING -50 -10, 10 -12, 10 VI -20, 10 V -30, 10 -10, 5 -12, 6 IO PD KRA221 226 Tj Tstg -800 625 150 -55 150 mA mW UNIT V
CHARACTERISTIC Output Voltage
KRA221 KRA222 KRA223 Input Voltage KRA224 KRA225 KRA226 Output Current Power Dissipation Junction Temperature Storage Temperature Range
2009. 2. 25
Revision No : 0
1/5
Free Datasheet http://www.0PDF.com
KRA221~KRA226
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Output Cut-off Current KRA221 226 SYMBOL IO(OFF) TEST CONDITION VO=-30V, VI=0 MIN. 33 39 GI VO=-5V, IO=-50mA 47 56 56 56 VO(ON) IO=-50mA, II=-2.5mA VI(ON) VO=-0.3V, IO=-20mA VI(OFF) fT* VO=-5V, IO=-0.1mA VO=-10V, IO=-5mA, f=100MHz -0.5 -0.3 II VI=-5V 0.7 1.54 R1 3.29 7 0.7 1.54 0.8 R2/R1 8 3.6 TYP. -0.1 200 1 2.2 4.7 ...
