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NT5CB1024M4CN Dataheets PDF



Part Number NT5CB1024M4CN
Manufacturers Nanya
Logo Nanya
Description 4Gb DDR3 SDRAM C-Die
Datasheet NT5CB1024M4CN DatasheetNT5CB1024M4CN Datasheet (PDF)

4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature  VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)  VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.075V) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9, 10, 11, 12, 13    WRITE Latency (CWL): 5,6,7,8,9, 10 POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, C.

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4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature  VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)  VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.075V) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9, 10, 11, 12, 13    WRITE Latency (CWL): 5,6,7,8,9, 10 POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock   Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 Through ZQ pin (RZQ:240 ohm±1%)           8n-bit prefetch architecture Output Driver Impedance Control Differential bidirectional data strobe Internal(self) calibration:Internal self calibration OCD Calibration Dynamic ODT (Rtt_Nom & Rtt_WR) Auto Self-Refresh Self-Refresh Temperature RoHS compliance and Halogen free Packages: 78-Balls BGA for x4/x8 components 96-Ball BGA for x16 components    Description The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM. The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 1 REV 1.0 04/ 2012 Free Datasheet http://www.0PDF.com 4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Pin Configuration – 78 balls BGA Package (x4) < TOP View> See the balls through the package x4 1 VSS VSS VDDQ VSSQ VREFDQ NC ODT NC VSS VDD VSS VDD VSS 2 VDD VSSQ DQ2 NC VDDQ VSS VDD  BA0 A3 A5 A7  3 NC DQ0 DQS  NC    BA2 A0 A2 A9 A13 A B C D E F G H J K L M N 7 NC DM DQ1 VDD NC CK  A10/AP A15 A12/  A1 A11 A14 8 VSS VSSQ DQ3 VSS NC VSS VDD ZQ VERFCA BA1 A4 A6 A8 9 VDD VDDQ VSSQ VSSQ VDDQ NC CKE NC VSS VDD VSS VDD VSS 2 REV1.0 04/ 2012 Free Datasheet http://www.0PDF.com 4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Pin Configuration – 78 balls BGA Package (X8) < TOP View> See the balls through the package x8 1 VSS 2 VDD 3 NC A 7 NU/ 8 VSS 9 VDD VSS VSSQ DQ0 B DM/TDQS VSSQ VDDQ VDDQ DQ2 DQS C DQ1 DQ3 VSSQ VSSQ DQ6  D VDD VSS VSSQ VREFDQ VDDQ DQ4 E DQ7 DQ5 VDDQ NC ODT VSS  F CK VSS NC VDD  G  VDD CKE NC   H A10/AP ZQ NC VSS BA0 BA2 J A15 VERFCA VSS VDD A3 A0 K A12/  BA1 VDD VSS A 5 A2 L A1 A4 VSS VDD A7 A9 M A11 A6 VDD VSS  A13 N A14 A8 VSS 3 REV1.0 04/ 2012 Free Datasheet http://www.0PDF.com 4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Pin Configuration – 96 balls BGA Package (x16) < TOP View> See the balls through the package x 16 1 VDDQ VSSQ VDDQ VSSQ VSS VDDQ VSSQ VREFDQ NC ODT NC VSS VDD VSS VDD VSS 2 DQU5 VDD DQU3 VDDQ VSSQ DQL2 DQL6 VDDQ VSS VDD  BA0 A3 A5 A7  3 DQU7 VSS DQU1 UDM DQL0 DQSL  DQL4    BA2 A0 A2 A9 A13 A B C D E F G H J K L M N P R T 7 DQU4  DQSU DQU0 DML DQL1 VDD DQL7 CK  A10/AP A15 A12/BC# A1 A11 A14 8 VDDQ DQU6 DQU2 VSSQ VSSQ DQL3 VSS DQL5 VSS VDD ZQ VREFCA BA1 A4 A6 A8 9 VSS VSSQ VDDQ VDD VDDQ VSSQ VSSQ VDDQ NC CKE NC VSS VDD VSS VDD VSS 4 REV1.0 04/ 2012 Free Datasheet http://www.0PDF.com 4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Input / Output Functional Description Symbol CK,  Type Input Function Clock: CK and  are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of . Clock Enable: CKE high activates, and CKE low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE low provides Precharge Power-Down and Self-Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit and for Self-Refresh entry. CKE is asynchronous for Self-Refresh exit. After VREF has CKE Input become stable during the power on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF must maintain to this i.


NT5CC256M16CP NT5CB1024M4CN NT5CC1024M4CN


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