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K15A60U Dataheets PDF



Part Number K15A60U
Manufacturers Toshiba
Logo Toshiba
Description TK15A60U
Datasheet K15A60U DatasheetK15A60U Datasheet (PDF)

TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note .

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TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 15 30 40 81 15 4 150 -55 to 150 Unit V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Note: Weight: 1.7 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit 2 °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 Start of commercial production 2008-02 1 2013-11-01 Free Datasheet http://www.0PDF.com TK15A60U Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VDD ≈ 300 V Turn-OFF time Total gate charge Gate-source charge Gate-drain charge toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 15 A Duty ≤ 1%, tw = 10 μs 10 V ID = 7.5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A Min ⎯ ⎯ 600 3.0 ⎯ 3.0 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.24 8.5 950 47 2300 37 80 8 105 17 10 7 Max ±1 100 ⎯ 5.0 0.3 ⎯ ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns VGS 0V Switching time Fall time 50 Ω RL = 40 Ω ⎯ ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 530 9.0 Max 15 30 -1.7 ⎯ ⎯ Unit A A V ns μC Marking K15A60U Note 4: A dot marking for identifying the indication of product Labels. Part No. (or abbreviation code) [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 Free Datasheet http://www.0PDF.com TK15A60U ID – VDS 10 Common source Tc = 25°C 10 Pulse test 15 7 8 30 10 15 ID – VDS 8.5 Common source Tc = 25°C Pulse test 8 18 7.5 8 6.8 24 (A) ID 6 6.5 Drain current 4 Drain current ID (A) 12 6.2 6 7 6.3 2 VGS = 5.8 V 6 VGS = 6.2 V 0 0 1 2 3 4 5 0 0 10 20 30 40 50 Drain−source voltage VDS (V) Drain−source voltage VDS (V) ID – VGS 30 VDS – VGS 10 24 VDS (V) Common source VDS = 20 V Pulse test 8 Common source Tc = 25°C Pulse test ID (A) 18 12 100 Drain−source voltage 6 Drain current 4 ID = 15A 6 25 Tc = −55°C 2 7.5 4 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate−source voltage VGS (V) Gate−source voltage VGS (V) ⎪Yfs⎪ − ID 100 Common source VDS = 10 V Pulse test Tc = −55°C 10 100 25 10 Common source Tc = 25°C Pulse test RDS (ON) − ID Drain−source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) 1 VGS = 10 V 15 0.1 1 0.1 0.1 1 10 100 0.01 1 10 100 Drain current ID (A) Drain current ID (A) 3 2013-11-.


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