Equivalent circuit
C
Darlington
2SD2439
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) f...
Equivalent circuit
C
Darlington
2SD2439
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2439 100max 100max 150min 5000min∗ 2.5max 3.0max 55typ 95typ V V MHz pF
16.2
B
(7 0 Ω )
E
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SB1588) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2439 160 150 5 10 1 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio, Series
Regulator and General Purpose
(Ta=25°C) Unit
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
µA
V
9.5±0.2
µA
23.0±0.3
a b
1.75 2.15 1.05 5.45±0.1 1.5 4.4
+0.2 -0.1
3.3
0.8
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 70 RL (Ω) 10 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 7 IB2 (mA) –7 ton (µs) 0.5typ tstg (µs) 10.0typ tf (µs) 1.1typ
5.45±0.1 1.5
0.65 +0.2 -0.1
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
10 m A 2. 5m A
V CE ( sat ) – I B Characteristics (Typical)
3
I C – V BE Temperature Characteristics (Typical)
10 (V C E =4V)
10
2m
A
1. 5m A
8 Collector Current I C (A)
1.2 mA
1m A
8 Collector Current I C (A)
2
6
0.8mA
6
I C =10A I C =7A 1 I C =5A
p)
Tem
...