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G16N50C Dataheets PDF



Part Number G16N50C
Manufacturers Vishay
Logo Vishay
Description SIHG16N50C
Datasheet G16N50C DatasheetG16N50C Datasheet (PDF)

SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single D FEATURES • Low Figure-of-Merit Ron x Qg 0.38 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG16N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PAR.

  G16N50C   G16N50C


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SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single D FEATURES • Low Figure-of-Merit Ron x Qg 0.38 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG16N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s EAS PD TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 16 10 40 2 320 250 - 55 to + 150 300 °C W/°C mJ W A UNIT V Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 www.vishay.com 1 Free Datasheet http://www.0PDF.com SiHG16N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 0.5 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductancea Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Resistance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Current IS ISM VSD trr Qrr IRRM MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg TEST CONDITIONS VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 8 A VDS = 50 V, ID = 3 A MIN. 500 3.0 - TYP. 0.6 0.317 3 1900 230 24 45 18 22 27 156 29 31 1.6 MAX. 5.0 ± 100 50 250 0.38 68 - UNIT V V/°C V nA μA Ω S VGS = 0 V, VDS = 25 V, f = 1.0 MHz pF VGS = 10 V ID = 16 A, VDS = 400 V - nC VDD = 250 V, ID = 16 A, Rg = 9.1 Ω, VGS = 10 V f = 1 MHz, open drain - ns Ω - 555 5.5 18 16 A 30 1.8 V ns μC A G S TJ = 25 °C, IS = 10 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V Note • The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. www.vishay.com 2 Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 Free Datasheet http://www.0PDF.com SiHG16N50C Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 VGS 45 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V ID, Drain-to-Source Current (A) 40 35 30 25 20 15 10 5 0 0 TJ = 25 °C ID, Drain-to-Source Current (A) 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 TJ = 150 °C TJ = 25 °C 7.0 V 5 10 15 20 25 30 10 12 14 16 18 20 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On-Resistance (Normalized) 30 VGS TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 3 ID = 16 A 2.5 2 1.5 1 0.5 VGS = 10 V 0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 ID, Drain-to-Source Current (A) TJ = 150 °C 25 20 15 10 5 0 0 7.0 V 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 www.vishay.com 3 Free Datasheet http://www.0PDF.com SiHG16N50C Vishay Siliconix 2800 2400 2000 Ciss 1600 1200 Coss 800 400 Crss 0 1 10 100 1000 ISD, Reverse Drain Current (A) C, Capacitance (pF) VGS = 0 V, f = 1MHz Ciss = Cgs +Cgd Cds SHORTED Crss = Cgd Coss = Cds + Cgd 100 10 TJ = 150 °C TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Sourc.


BC618 G16N50C SIHG16N50C


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