G16N50C

SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single D FEATURES Low Figure-of-Merit Ron x Qg 0.38 100 % Avalanche Tested Gate Charge Improved Trr/Qrr Improved Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG16N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s EAS PD TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 16 10 40 2 320 250 - 55 to + 150 300 °C W/°C mJ W A UNIT V Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 www.vishay.com 1 Free Datasheet http://www.0PDF.com SiHG16N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 0.5 U...