www.DataSheet.co.kr
2SA1972
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1972
High-Voltage Switching Applica...
www.DataSheet.co.kr
2SA1972
TOSHIBA
Transistor Silicon
PNP Triple Diffused Type
2SA1972
High-Voltage Switching Applications
Unit: mm
High breakdown voltage: VCEO = −400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 900 150 −55 to 150 Unit V V V A A mW °C °C
JEDEC
TO-92MOD
JEITA ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2009-12-21
Datasheet pdf - http://www.DataSheet4U.net/
Free Datasheet http://www.Datasheet4U.com
www.DataSheet.co.kr
2SA1972
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitt...