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STPS10H100C

STMicroelectronics

High voltage power Schottky rectifier

STPS10H100C High voltage power Schottky rectifier Datasheet - production data Description A1 K A2 Schottky barrier rec...


STMicroelectronics

STPS10H100C

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STPS10H100C High voltage power Schottky rectifier Datasheet - production data Description A1 K A2 Schottky barrier rectifier designed for high frequency miniature switched mode power supplies such as adapters and on-board DC/DC converters. The product is packaged in TO-220AB, TO-220FPAB, and D2PAK. Table 1. Device summary K A2 A1 2 D PAK STPS10H100CG-TR IF(AV) VRRM Tj (max) VF(max) 2x5A 100 V 175 °C 0.61 V A1 TO-220AB STPS10H100CT A2 K A1 A2 K TO-220FPAB STPS10H100CFP Features  High junction temperature capability for converters located in confined environment  Low leakage current at high temperature  Low static and dynamic losses as a result of the Schottky barrier  Avalanche capability specified December 2013 This is information on a product in full production. DocID024444 Rev 1 1/10 www.st.com Characteristics STPS10H100C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt 1. dPtot --------------dTj Parameter Repetitive peak reverse voltage Forward rms current Average forward current  = 0.5 TO-220AB, D PAK TO-220FPAB 2 Value 100 10 Tc = 165 °C Tc = 160 °C Per diode Per device 5 10 180 1 515 -65 to + 175 Unit V A A A A W °C °C V/µs Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage  1 ------------------------Rth  j ...




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