MT3205

MT3205 N-Channel Power® MOSFET MOS-TECH Semiconductor Co.,LTD Mar 2010 MT3205 Features N-Channel Power® MOSFET 55V, 110A, 7.2mΩ Description This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A High performance trench technology for extermly low RDS(on) High power and current handing capability RoHS compliant D G DS TO-220 G MT Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed (Note 2) (Note 1) Ratings 55 ±20 110 390 365 250 1.0 -55 to +175 Units V V A A mJ W W/oC oC Operating and Storage Temperature Range Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.75 40 Units oC/W ©2010 MOS-TECH Semiconductor Corporation MT3205 Rev. D 1 www.mtsemi.com Free Datasheet http://www.nDatasheet.com Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking MT3205 Device MT3205 Package TO-220 Reel Size Tape Width Quantity 50units Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. ...