DatasheetsPDF.com

2SD2105

Hitachi

Silicon NPN Transistor

2SD2105 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collec...


Hitachi

2SD2105

File Download Download 2SD2105 Datasheet


Description
2SD2105 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 12 3 Free Datasheet http://www.nDatasheet.com 2SD2105 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID * 1 1 Rating 120 120 7 10 15 2 30 150 –55 to +150 10 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 3.0 V V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 5 A* 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD IC = 5 A, IB = 10 mA* IC = 5 A, IB = 10 mA* ID = 10 A* 1 1 IC = 10 A, IB = 100 mA* 1 1 IC = 10 A, IB = 100 mA* 1 2 Free Datasheet http://www.nDatasheet.com 2SD2105 M...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)