INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD363
DESCRIPTION ·Collector-Emit...
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SD363
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃
APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous Collector Power Dissipation @ TC=25℃
6
A
PC
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
htp:/w.BDTIC.com
Free Datasheet http://www.datasheet4u.com/
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD363
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 20mA; IB= 0
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
300
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
8
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
B
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
1.0
mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
40
240
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
10
MHz
hFE Classifications R 40-80 O 70-140 Y 120-240
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