STA3250Q
PNP Silicon Transistor
Applications
• Power amplifier application • High current switching application
PIN Co...
STA3250Q
PNP Silicon
Transistor
Applications
Power amplifier application High current switching application
PIN Connection
Features
Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-2A Small and compact SMD type package
SOT-223
Ordering Information
Type NO. STA3250Q Marking STA3250□ Package Code SOT-223
□ : Year & Week Code
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature range
[Ta=25℃] Symbol
VCBO VCEO VEBO IC PC PC* TJ Tstg
Rating
-50 -50 -5 -2 1.1 1.5 150 -55~150
Unit
V V V A W W °C °C
Characteristic
Thermal resistance Junction-ambient
Symbol
Rth(J-A) Rth(J-A) *
Typ.
-
Max
113.6 83.3
Unit
℃/W
* Device mounted on ceramic substrate (250mm2ⅹ0.8t)
KSD-T5A001-002
1
Free Datasheet http://www.nDatasheet.com
STA3250Q
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current
[Ta=25℃] Symbol
BVCEO ICBO IEBO hFE
Test Condition
IC=-1mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A* VCE=-2V, IC=-1.5A* IC=-1A, IB=-0.05A* IC=-1A, IB=-0.05A* VCE=-2V, IC=-0.05A VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-50 120 40 215 24 100 300 50 -0.1 -0.1 240 -0.35 -1.2 -
Unit
V μA μA
DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector...