2SB648

2SB648, 2SB648A Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IC(peak) PC Tj Tstg 2SB648 –180 –120 –5 –50 –100 1 150 –55 to +150 2SB648A –180 –160 –5 –50 –100 1 150 –55 to +150 Unit V V V mA mA W °C °C Free Datasheet http://www.nDatasheet.com 2SB648, 2SB648A Electrical Characteristics (Ta = 25°C) 2SB648 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO Min Typ Max — — — –10 320 — –2 –1.5 — — 2SB648A Min Typ Max — — — –10 200 — –2 –1.5 — — V V MHz pF Unit V V V µA Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –10 mA VCE = –5 V, IC = –1 mA IC = –30 mA, IB = –3 mA VCE = –5 V, IC = –10 mA VCE = –10 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz –180 — –120 — –5 — — — — — — — 140 4.5 –180 — –160 — –5 — 60 30 — — — — — — — — — — 140 4.5 Collector cutoff current ICBO DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) 1 60 30 — — — — Base to emitter voltage VBE Gain bandwidth product fT Collector outpu...