KSB817

KSB817 KSB817 Audio Power Amplifier Car Booster Output Amplifier DC to DC Converter High Current Capability High Power Dissipation Complementary to KSD1047 1 TO-3P 1.Base 2.Collector 3.Emitter PNP Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 160 - 140 -6 -8 - 16 80 150 - 40 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tF tSTG Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Fall Time Storage Time Test Condition IC = - 5mA, IE = 0 IC = - 10mA, RBE = ∞ IE = - 5mA, IC = 0 VCB = - 80V, IE = 0 VBE = - 4V, IC = 0 VCE = - 5V, IC = - 1A VCE = - 5V, IC = - 6A IC = - 5A, IB = - 0.5A VCE = - 5V, IC = - 1A VCE = - 5V, IC = - 1A VCB = - 10V, f = 1MHz VCC = 20V IC = 1A = 10·IB1 = - 10·IB2 RL = 20Ω 15 300 0.25 0.53 1.61 60 20 Min. - 160 - 140 -6 - 0.1 - 0.1 200 - 2.5 - 1.5 V V MHz pF µs µs µs Typ. Max. Units V V V mA mA * Pulse Test: ...