Document
CPWR-0600S001
– Silicon Carbide Schottky Diode Chip
VRRM = 600 V IF(AVG) = 1 A
Zero Recovery® Rectifier
Features
• • • • • • • 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF
Chip Outline
Qc = 3.3 nC
Part Number
CPWR-0600S001B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol
VRRM VRSM VDC
Parameter
Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Average Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Operating Junction and Storage Temperature
Value Unit
600 600 600 1 5 20 -55 to +175 V V V A A A ˚C
Test Conditions
Note
Rev. F WR-0600S001 Data Sheet: CP
IF(AVG) IFRM IFSM TJ , Tstg
TJ=175ºC TC=25ºC, tP=8.3 ms, Half Sine Wave TC=25ºC, tP=10 µs, Pulse 1 1
Subject to change without notice. www.cree.com/power
1
Free Datasheet http://www.nDatasheet.com
Electrical Characteristics
Symbol
VF IR
Parameter
Forward Voltage Reverse Current
Typ.
1.6 2.0 2 20 40 3.3 80 11 8.5
Max.
1.8 2.4 5 100 500
Unit
V μA
Test Conditions
IF = 1 A TJ=25°C IF = 1 A TJ=175°C VR = 450 V TJ=25°C VR = 600 V TJ=25°C VR = 600 V TJ=150°C VR = 500 V, IF = 1 A di/dt = 500 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz
Note
QC
Total Capacitive Charge
nC
C
Total Capacitance
pF
Note: 1. Assumes θJC Thermal Resistance of 1.8˚C/W or less
Mechanical Parameters
Parameter
Die Size Anode Pad Size Anode Pad Opening Thickness Wafer Size Anode Metalization (Al) Cathode Metalization (Ni/Ag) Frontside Passivation
Typ.
.84 x .84 0.70 x 0.70 0.58 x 0.0.58 377 ± 10% 100 4 0.8 Polyimide
Unit
mm mm mm μm mm μm μm
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CPWR-0600S001 Rev. F
Free Datasheet http://www.nDatasheet.com
Chip Dimensions
A
symbol
B A
dimension mm inch 0.0331 0.0276 0.84 0.70
A B
B
Part Number
CPWR-0600S001B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due to an increase in adhesion over time, die stored for an extended period may affix too strongly to the tape. These die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2 – 3 weeks of delivery to assure 100% release of all die without issues.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2006-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power
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CPWR-0600S001 Rev. F
Free Datasheet http://www.nDatasheet.com
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