Document
C5D50065D
Silicon Carbide Schottky Diode
VRRM = Qc =
650 V
Z-Rec® Rectifier
Features
IF (TC=130˚C) = 50 A 110 nC
Package
• • • • • • •
650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF
Benefits
TO-247-3
• • • • •
Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway
Applications
• • • • •
Solar Inverters Motor Drives EV Chargers UPS Automotive
Part Number
C5D50065D
Package
TO-247-3
Marking
C5D50065
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
VRRM VRSM VDC IF IFRM IFSM IF,Max Ptot TJ , Tstg
Parameter
Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Peak Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Current Power Dissipation Operating Junction and Storage Temperature TO-247 Mounting Torque
Value
650 650 650 100 50 46 153 106 400 330 2000 1600 300 130 -55 to +175 1 8.8
Unit
V V V A A A A W ˚C Nm lbf-in TC=25˚C TC=130˚C TC=135˚C
Test Conditions
Note
TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse TC=25˚C TC=110˚C
M3 Screw 6-32 Screw
1
C5D50065D Rev. Free Datasheet http://www.nDatasheet.com
Electrical Characteristics
Symbol Parameter Typ.
1.5 1.25 1.8 1.3 50 4 200 6 110 1970 200 180
Max.
1.8 2.2 500 1000
Unit
Test Conditions
IF = 50 A TJ=25°C IF = 25 A TJ=25°C IF = 50 A TJ=175°C IF = 25 A TJ=175°C VR = 650 V , TJ=25°C VR = 400 V , TJ=25°C VR = 650 V , TJ=175°C VR = 400 V , TJ=175°C VR = 400 V, IF = 50 A di/dt = 500 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz
Note
VF
Forward Voltage
V
IR
Reverse Current
μA
QC
Total Capacitive Charge
nC
C
Total Capacitance
pF
Note: 1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
0.5
Unit
°C/W
Typical Performance
100
0.45 0.40
75
Foward Current, IF Forward Current I (A) F (A)
ReverseILeakage Current, Reverse Voltage I(mA) RR (mA) R
0.35
TJ = 175 °C
TJ = 175 °C
0.30 0.25 0.20 0.15
TJ = 25 °C TJ = 125 °C TJ = 75 °C
50
TJ = 125 °C TJ = 75 °C TJ = 25 °C TJ = -55 °C
25
0.10 0.05 0.00
TJ = -55 °C
0 0 0.5 1 1.5 2 2.5 3 3.5 4
0
100
200
300
400
500
600
700
Foward Voltage, V(V) VF Forward Voltage F (V)
Figure 1. Forward Characteristics
Reverse Voltage Voltage, VR (V) VR Reverse (V)
Figure 2. Reverse Characteristics
2
C5D50065D Rev. Free Datasheet http://www.nDatasheet.com
Typical Performance
350 350 325 325 300 300 300 300 10% 20% 30% 50% 70% DC Duty Duty Duty Duty Duty 275 275 250 250
Power Dissipation (W)
250 250
225 225 200 200 175 175 150 150 125 125 100 100 75 75 50 50 25 25
200 200
IF (A)
150 150
100 100
50 50
00 25 50 75 100 125 150 175 25 50 75 100 125 150 175
PTOT (W)
0 0 25 50 75 100 125 150 175
25
50
TC (°C)
Figure 3. Current Derating
75 100 125 (°C) TcT Case Temperature (°C) C
150
175
Figure 4. Power Derating
120 120
2000 2000
Conditions: = 25 ° C T TJ =25 C
J °
Conditions:
1800 1800 1600 1600 1400 1400
Capacitance (pF)
100 100
rr Capacitive Charge, QC (nC)
Conditions: Conditions: Figure 6. Power Derating TJ = 25 °C T =25 C F 1 MHz test = F =1 MHz V = =25mV V test 25 mV
J ° test test
80 80
1200 1200 1000 1000
Q (nC)
C (pF)
60 60
800 800
600 600
40 40
20 20
400 400 200 200
0 0 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400
0 0 0.1 0.1
1
1
10
10
100
100
1000
1000
Reverse Voltage, VR (V) V (V) R
Figure 5. Recovery Charge vs. Reverse Voltage
Reverse Voltage, VR (V) VR (V)
Figure 6. Typical Capacitance vs. Reverse Voltage
3
C5D50065D Rev. Free Datasheet http://www.nDatasheet.com
Typical Performance
10000 10000
1000 1000
IIFSM(A) (A) FSM
TJ = 25°C TJ = 110°C
100 100
10 0 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02
tp (s)
Figure 7. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform)
tp(s)
1
(°C/W) Thermal Junction To Resistance Case Impedance, ZthJC (oC/W)
0.5 0.3
100E-3
0.1 0.05 0.02
10E-3
SinglePulse 0.01
1E-3
100E-6 1E-6 10E-6 100E-6
Time, tp (s) T (Sec)
1E-3
10E-3
100E-3
1
Figure 8. Transient Thermal Impedance
4
C5D50065D Rev. Free Datasheet http://www.nDatasheet.com
Package Dime.