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C5D50065D Dataheets PDF



Part Number C5D50065D
Manufacturers Cree
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Description Silicon Carbide Schottky Diode
Datasheet C5D50065D DatasheetC5D50065D Datasheet (PDF)

C5D50065D Silicon Carbide Schottky Diode VRRM = Qc = 650 V Z-Rec® Rectifier Features IF (TC=130˚C) = 50 A 110 nC Package • • • • • • • 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits TO-247-3 • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses.

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C5D50065D Silicon Carbide Schottky Diode VRRM = Qc = 650 V Z-Rec® Rectifier Features IF (TC=130˚C) = 50 A 110 nC Package • • • • • • • 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits TO-247-3 • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • • Solar Inverters Motor Drives EV Chargers UPS Automotive Part Number C5D50065D Package TO-247-3 Marking C5D50065 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol VRRM VRSM VDC IF IFRM IFSM IF,Max Ptot TJ , Tstg Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Peak Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Current Power Dissipation Operating Junction and Storage Temperature TO-247 Mounting Torque Value 650 650 650 100 50 46 153 106 400 330 2000 1600 300 130 -55 to +175 1 8.8 Unit V V V A A A A W ˚C Nm lbf-in TC=25˚C TC=130˚C TC=135˚C Test Conditions Note TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse TC=25˚C TC=110˚C M3 Screw 6-32 Screw 1 C5D50065D Rev. Free Datasheet http://www.nDatasheet.com Electrical Characteristics Symbol Parameter Typ. 1.5 1.25 1.8 1.3 50 4 200 6 110 1970 200 180 Max. 1.8 2.2 500 1000 Unit Test Conditions IF = 50 A TJ=25°C IF = 25 A TJ=25°C IF = 50 A TJ=175°C IF = 25 A TJ=175°C VR = 650 V , TJ=25°C VR = 400 V , TJ=25°C VR = 650 V , TJ=175°C VR = 400 V , TJ=175°C VR = 400 V, IF = 50 A di/dt = 500 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note VF Forward Voltage V IR Reverse Current μA QC Total Capacitive Charge nC C Total Capacitance pF Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. 0.5 Unit °C/W Typical Performance 100 0.45 0.40 75 Foward Current, IF Forward Current I (A) F (A) ReverseILeakage Current, Reverse Voltage I(mA) RR (mA) R 0.35 TJ = 175 °C TJ = 175 °C 0.30 0.25 0.20 0.15 TJ = 25 °C TJ = 125 °C TJ = 75 °C 50 TJ = 125 °C TJ = 75 °C TJ = 25 °C TJ = -55 °C 25 0.10 0.05 0.00 TJ = -55 °C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400 500 600 700 Foward Voltage, V(V) VF Forward Voltage F (V) Figure 1. Forward Characteristics Reverse Voltage Voltage, VR (V) VR Reverse (V) Figure 2. Reverse Characteristics 2 C5D50065D Rev. Free Datasheet http://www.nDatasheet.com Typical Performance 350 350 325 325 300 300 300 300 10% 20% 30% 50% 70% DC Duty Duty Duty Duty Duty 275 275 250 250 Power Dissipation (W) 250 250 225 225 200 200 175 175 150 150 125 125 100 100 75 75 50 50 25 25 200 200 IF (A) 150 150 100 100 50 50 00 25 50 75 100 125 150 175 25 50 75 100 125 150 175 PTOT (W) 0 0 25 50 75 100 125 150 175 25 50 TC (°C) Figure 3. Current Derating 75 100 125 (°C) TcT Case Temperature (°C) C 150 175 Figure 4. Power Derating 120 120 2000 2000 Conditions: = 25 ° C T TJ =25 C J ° Conditions: 1800 1800 1600 1600 1400 1400 Capacitance (pF) 100 100 rr Capacitive Charge, QC (nC) Conditions: Conditions: Figure 6. Power Derating TJ = 25 °C T =25 C F 1 MHz test = F =1 MHz V = =25mV V test 25 mV J ° test test 80 80 1200 1200 1000 1000 Q (nC) C (pF) 60 60 800 800 600 600 40 40 20 20 400 400 200 200 0 0 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 0 0 0.1 0.1 1 1 10 10 100 100   1000 1000 Reverse Voltage, VR (V) V (V) R Figure 5. Recovery Charge vs. Reverse Voltage Reverse Voltage, VR (V) VR (V) Figure 6. Typical Capacitance vs. Reverse Voltage 3 C5D50065D Rev. Free Datasheet http://www.nDatasheet.com Typical Performance 10000 10000 1000 1000 IIFSM(A) (A) FSM TJ = 25°C TJ = 110°C 100 100 10 0 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 tp (s) Figure 7. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) tp(s) 1 (°C/W) Thermal Junction To Resistance Case Impedance, ZthJC (oC/W) 0.5 0.3 100E-3 0.1 0.05 0.02 10E-3 SinglePulse 0.01 1E-3 100E-6 1E-6 10E-6 100E-6 Time, tp (s) T (Sec) 1E-3 10E-3 100E-3 1 Figure 8. Transient Thermal Impedance 4 C5D50065D Rev. Free Datasheet http://www.nDatasheet.com Package Dime.


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