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C3D03060E Dataheets PDF



Part Number C3D03060E
Manufacturers Cree
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Description Silicon Carbide Schottky Diode
Datasheet C3D03060E DatasheetC3D03060E Datasheet (PDF)

C3D03060E Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 5.5 A Qc = 6.7 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Benefits • • • • • Replace Bipolar with.

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C3D03060E Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 5.5 A Qc = 6.7 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 CASE Applications Part Number C3D03060E Package TO-252-2 Marking C3D03060 • • Switch Mode Power Supplies Power Factor Correction - Typical PFC Pout : 300W-450W Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter VRRM VRSM VDC IF Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Value 600 600 600 Unit V V V A Test Conditions Note 11.5 5.5 3 18 13.5 26 23 100 53 23 -55 to +175 TC=25˚C TC=135˚C TC=160˚C TC=25˚C, tP=10 mS, Half Sine Wave D=0.3 TC=110˚C, tP=10 mS, Half Sine Wave D=0.3 TC=25˚C, tP=10 mS, Half Sine Wave D=0.3 TC=110˚C, tP=10 mS, Half Sine Wave D=0.3 TC=25˚C, tP=10 µS, Pulse TC=25˚C TC=110˚C IFRM IFSM IFSM Ptot TJ , Tstg Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation Operating Junction and Storage Temperature A A A W ˚C 1 C3D03060E Rev. B Free Datasheet http://www.nDatasheet.com Electrical Characteristics Symbol VF IR QC Parameter Forward Voltage Reverse Current Total Capacitive Charge Typ. Max. 1.7 2.4 Unit V μA nC Test Conditions IF = 3 A TJ=25°C IF = 3 A TJ=175°C VR = 600 V TJ=25°C VR = 600 V TJ=175°C VR = 600 V, IF = 3A di/dt = 500 A/μS TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note 10 20 6.7 155 13 12 50 100 C Total Capacitance pF Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter TO-252 Package Thermal Resistance from Junction to Case Typ. 2.8 Unit °C/W Typical Performance 6.0 6.0 TJ = TJ = TJ = TJ = 25°C 75°C 125°C 175°C Reverse Current (A) 14 1.4E-05 5.0 5.0 12 1.2E-05 1.0E-05 10 IR Reverse Current (μA) IF Forward Current (A) 4.0 4.0 Forward Current 3.0 3.0 8 8.0E-06 Current 25C Current 25C Current 75C 6.0E-06 6 Current 125C Current 175C 4 4.0E-06 Current 75C Current 125 TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175° 2.0 2.0 Current 175 1.0 1.0 2.0E-06 2 0 0.0E+00 0.5 0.5 0.0 0 0.0 0.0 VF Forward Voltage (V) Forward Voltage 1.0 1.0 1.5 2.0 2.5 3.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800 VR Reverse Volta.


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