CCS050M12CM2
1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FETTM MOSFET and Z-RecTM Diode
Features
VDS ...
CCS050M12CM2
1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FETTM MOSFET and Z-RecTM Diode
Features
VDS 1.2 kV RDS(on) (TJ = 25˚C) EOFF (TJ = 150˚C)
Package
25 mΩ 0.6 mJ
Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBC
System Benefits
Enables Compact and Lightweight Systems High Efficiency Operation Ease of
Transistor Gate Control Reduced Cooling Requirements Reduced System Cost
Applications
Solar Inverters UPS and SMPS Induction Heating Regen Drives 3-Phase PFC Motor Drives Part Number
CCS050M12CM2
Package
Six-Pack
Marking
CCS050M12CM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol VDS VGS ID ID(pulse) TJ TC ,TSTG Visol LStray M G PD Parameter Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Pulsed Drain Current Junction Temperature Case and Storage Temperature Range Case Isolation Voltage Stray Inductance Mounting Torque Weight Power Dissipation Value 1.2 +25/-10 87 59 250 150 -40 to +125 2.5 30 5.0 180 312 Unit kV V A A ˚C ˚C kV nH N-m g W TC = 25 ˚C, TJ ≤ 150 ˚C Fig. 27 DC, t = 1 min Measured from pins 25-26 to 27-28 VGS = 20 V, TC = 25 ˚C VGS = 20 V, TC = 90 ˚C Pulse width tP = 250 μs Rate limited by Tjmax,TC = 25˚C Fig. 26 Fig. 28 Test Conditions Notes
2,Rev. B S050M12CM Datasheet: CC
Subject to change without not...