CPM2-1200-0025B

VDS 1200 V CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 120˚C 50 A RDS(on) 25 mΩ N-Channel Enhancement Mode High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications Solar Inverters High Voltage DC/DC Converters Motor Drives EV Chargers UPS Part Number CPM2-1200-0025B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 107 50 150 -10/+25 -55 to +150 260 Unit A Test Conditions VGS@20 V, TC = 25˚C VGS@20 V, TC = 120˚C Note Note 1 IDS (DC) IDS (pulse) Pulsed Drain Current VGS TJ , Tstg TL Gate Source Voltage Operating Junction and Storage Temperature Solder Temperature A V ˚C ˚C Pulse width tP limited by Tjmax TC = 25˚C Note (1): Assumes a RθJC < 0.32 K/W f 1 CPM2-1200-0025B Rev. Free Datasheet http://www.nDatasheet.com Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Min. 1200 1.9 Typ. 2.3 1.6 TBD 2 Max. Unit V Test Conditions VGS = 0 V, ID = 100 μA VDS = 10V, ID = 1 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 1 mA VDS = 1200 V, VGS = 0 V Note...