CPM2-1200-0160B

VDS 1200 V CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 17.7 A RDS(on) 160 mΩ N-Channel Enhancement Mode High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Benefits Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications Auxiliary Power Supplies Solar Inverters High Voltage DC/DC Converters PFC Boost Circuits Part Number CPM2-1200-0160B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 17.7 11 45 -10/+25 -55 to +150 260 325 Unit A Test Conditions VGS@20 V, TC = 25˚C VGS@20 V, TC = 100˚C Note Note 1 IDS (DC) IDS (pulse) Pulsed Drain Current VGS TJ , Tstg TL TPROC Gate Source Voltage Operating Junction and Storage Temperature Solder Temperature Maximum Processing Temperature A V ˚C ˚C ˚C Pulse width tP = 50 μs duty limited by Tjmax, TC = 25˚C 10min Maximum Note 1: Assumes a RθJC < 0.90 K/W f 1 CPM2-1200-0160B Rev. Free Datasheet http://www.nDatasheet.com Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Min. 1200 1.8 1.5 Typ. 2.2 1.9 1 Max. Unit V Test Conditions VGS = 0 V, ID = 50 μA VDS = 10V, ID = 0.5 mA VDS = 10V, ID = 0.5 mA TJ = 150 ºC VDS = 1...