CMF20120D

CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) R 1200 V 42 A 80mΩ DS(on) N-Channel Enhancement Mode High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies UPS Part Number CMF20120D Package TO-247-3 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 42 24 90 2.2 1.5 20 -5/+25 215 -55 to +135 260 1 8.8 Unit A Test Conditions VGS@20V, TC = 25˚C VGS@20V, TC = 100˚C Note Fig. 10 ID IDpulse EAS EAR IAR VGS Ptot TJ , Tstg TL Md Pulsed Drain Current Single Pulse Avalanche Energy Repetitive Avalanche Energy Repetitive Avalanche Current Gate Source Voltage Power Dissipation Operating Junction and Storage Temperature Solder Temperature Mounting Torque A J J A V W ˚C ˚C Pulse width tP limited by Tjmax TC = 25˚C ID = 20A, VDD = 50 V, L = 9.5 mH tAR limited by Tjmax ID = 20A, VDD = 50 V, L = 3 mH tAR limited by Tjmax Fig. 15 TC=25˚C Fig. 9 1.6mm (0.063”) from case for 10s Nm M3 or 6-32 screw lbf-in 1 CMF20120D Rev. D Free Datasheet http://www.nDatasheet.com Electrical Charac...