Silicon Carbide Power MOSFET
CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET
Features Package
VDS ID(MAX)
= 1200 V = 24 A
N-Channel Enh...
Description
CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET
Features Package
VDS ID(MAX)
= 1200 V = 24 A
N-Channel Enhancement Mode
RDS(on)
= 160mΩ
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3
Benefits
Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency
Applications
Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies
Part Number
CMF10120D
Package
TO-247-3
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol Parameter
Continuous Drain Current
Value
24 13 49 1.2 0.8 10 -5/+25 134 -55 to +135 260 1 8.8
Unit
A
Test Conditions
VGS@20V, TC = 25˚C VGS@20V, TC = 100˚C
Note
Fig. 10
ID IDpulse EAS EAR IAR VGS Ptot TJ , Tstg TL Md
Pulsed Drain Current Single Pulse Avalanche Energy Repetitive Avalanche Energy Repetitive Avalanche Current Gate Source Voltage Power Dissipation Operating Junction and Storage Temperature Solder Temperature Mounting Torque
A J J A V W ˚C ˚C
Pulse width tP limited by Tjmax TC = 25˚C ID = 10A, VDD = 50 V, L = 20 mH tAR limited by Tjmax ID = 10A, VDD = 50 V, L = 15 mH tAR limited by Tjmax
Fig. 15
TC=25˚C
Fig. 9
1.6mm (0.063”) from case for 10s
Nm M3 or 6-32 screw lbf-in
1
CMF10120D Rev. A
Free Datasheet http://www.nDatasheet.com
Electrical Chara...
Similar Datasheet