INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2489
DESCRIPTION ·Good Linearit...
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SC2489
DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1065
APPLICATIONS ·Designed for AF amplifier,high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER MAX UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
15
A
PC
120
W
Tj
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.nDatasheet.com
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2489
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A ; IE= 0
150
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 8A; IB= 0.8A
B
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 10A ; VCE= 5V
2.5
V
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2
mA
hFE-1
DC Current Gain
IC= 2A ; VCE= 5V
40
280
hFE-2
DC Current Gain
IC= 10A ; VCE= 5V
30
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
50
MHz
hFE-1 Classifications R 40-80 Q 60-120...
