Transistor
2SA719, 2SA720
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplificati...
Transistor
2SA719, 2SA720
Silicon
PNP epitaxial planer type
For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318
s Features
q Complementary pair with 2SC1317 and 2SC1318.
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
13.5±0.5
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SA719
–30
base voltage 2SA720
VCBO
–60
V
Collector to 2SA719
–25
VCEO
V
emitter voltage 2SA720
–50
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1
A
Collector current
IC
–500
mA
Collector power dissipation PC
625
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
2SA719
voltage
2SA720
Collector to emitter 2SA719
voltage
2SA720
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
Symbol ICBO
VCBO
VCEO
VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob
Conditions VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –10mA, IB = 0
IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz
min
typ
max Unit
– 0.1 µA
–...