K4J52324QE

K4J52324QE 512M GDDR3 SDRAM 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. - 1/58 - Rev. 1.3 Feb 2008 Free Datasheet http://www.datasheetlist.com/ K4J52324QE Revision History Revision 0.0 Month March Year 2006 - Target Spec History 512M GDDR3 SDRAM 1.0 June 2006 - Finalized Spec Deleted -BC20/16 binning Changed Voltage SPEC from C-die : VDD/VDDQ : 2.0V + 0.1V of -BJ12 @ C-die => -BC12 : 1.8V + 0.1V @ E-die : VDD/VDDQ : 2.0V + 0.1V of - BJ11 @ C-die => -BJ11: 1.9V + 0.1V @ E-die Added -BJ1A(GF2000) spec : VDD/VDDQ : 1.9V + 0.1V @ E-die Added curr...