Document
HM6N70/F
General Description:
HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220, TO-220Fwhich accords with the RoHS standard. VDSS ID PD(TC=25℃ ) RDS(ON)Typ 700 6 85 1.8 V A W Ω
Features:
l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge
(Typical Data:18.6nC)
TO-220) G D S TO-220 G D S
l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute( Tc= 25℃ unless otherwise specified) :
Symbol VDSS ID IDM VGS EAS EAR IAR
a1 a2 a1
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current
Rating 700 6 3.6 24 ±30 180 26 2.3 5.0 85 0.68 150, –55 to 150 300
Units V A A A V mJ mJ A V/ns W W/℃ ℃ ℃
a1 a3
dv/dt PD
Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25 °C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering
TJ, Tstg TL
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HM6N70/F
Electrical Characteristics( Tc= 25℃ unless otherwise specified) :
OFF Characteristics Symbol VDSS Δ BVDSS/Δ TJ IDSS IGSS(F) IGSS(R) Parameter
Drain to Source Breakdown Voltage Bvdss Temperature Coefficient Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage
Test Conditions
V GS =0V, I D =250 µ A ID=250uA,Reference25 ℃ V DS = 700V, VGS = 0V, T a = 25 ℃ V DS =560V, V GS = 0V, T a = 125 ℃ V GS =+30V V GS =-30V
Rating
Min. Typ. Max.
Units
V V/℃ µA nA nA
700 ------
-0.71 -----
--1 100 100 -100
ON Characteristics Symbol RDS(ON) VGS(TH) Parameter
Drain-to-Source On-Resistance Gate Threshold Voltage
Test Conditions
V GS =10V,I D =3A V DS = V GS , I D = 250 µ A
Rating
Min. Typ. Max.
Units Ω V
-2.0
1.8
2.2 4.0
Pulse width tp≤ 380µs,δ≤ 2% Dynamic Characteristics Symbol gfs Ciss Coss Crss Parameter
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
V GS = 0V V DS = 25V f = 1.0MHz
Test Conditions
V DS =15V, I D =3A
Rating
Min. Typ. Max.
Units S pF
-----
4 707 69 6.6
-----
Resistive Switching Characteristics Symbol td(ON) tr td(OFF) tf Qg Qgs Qgd Parameter
Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“ Miller”)Charge
I D =6A V DD =350V V GS = 10V I D =6A V DD =350V V GS = 10V RG =9.1 Ω
Test Conditions
Rating
Min. Typ. Max.
Units
--------
10 11 32 15 18.6 3.4 7.4
------nC ns
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HM6N70/F
Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Parameter
Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
I S =6A,VGS =0V I S =6A,Tj = 25° C dI F/dt=100A/us, V GS =0V
Test Conditions
Rating
Min. Typ. Max.
Units A A V ns
nC
------
---196 895
6 24 1.5
Pulse width tp≤ 380µs,δ≤ 2% Symbol Rθ JC Rθ JA
a1
Parameter
Junction-to-Case Junction-to-Ambient
Typ. 1.47 62.5
Units ℃ /W ℃ /W
: Repetitive rating; pulse width limited by maximum junction temperature : L=10.0mH, ID=6A, Start TJ=25℃ a3 : ISD =6A,di/dt ≤ 100A/us,VDD ≤ BVDS, Start TJ=25℃
a2
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Free Datasheet http://www.datasheetlist.com/
HM6N70/F
Characteristics Curve:
100 PD , Power Dissipation ,Watts
6 Id , Drain Current , Amps 5 4 3 2 1
75
50
25
0 0 25 50 75 100 125 150 TC , Case Temperature , C
0
0
25
75 100 125 50 TC , Case Temperature , C
150
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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Free Datasheet http://www.datasheetlist.com/
HM6N70/F
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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Free Datasheet http://www.datasheetlist.com/
HM6N70/F
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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Free Datasheet http://www.datasheetlist.com/
HM6N70/F
TestCircuitandWaveform
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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Free Datasheet http://www.datasheetlist.com/
HM6N70/F
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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Free Datasheet http://www.datasheetlist.com/
HM6N70/F
Package Dimensions
TO-220F
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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Free Datasheet http://www.datasheetlist.com/
HM6N70/F
The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name
Pb Hg Cd Cr(VI)
≤0.1%
PBB ○ ○ ○ ○ ○
PBDE
≤0.1%
Limit Lead Frame Molding Compound Chip Wire B.