D5023

D5023 Silicon NPN transistor epitaxial type D5023 [ Applications ] General purpose [ Feature ] Low collector saturation voltage VCE(sat)= 0.8V(Max.) at IC= 2A, IB= 0.2A [ Absolute maximum ratings (Ta=25C) ] Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Symbol Maximum ratings VCBO 40 VCEO 32 VEBO 5 IC 2 Tj 150 Tstg -55 to 150 Unit V V V A C C [ Electrical characteristics (Ta=25C) ] Characteristic Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 32 5 82 Typ. 100 30 Max. 1 1 360 0.8 Unit V V V uA uA V MHz pF Conditions IC= 50uA, IE= 0A IC= 1mA, IB= 0A IE= 50uA, IC= 0A VCB= 20V VEB= 4V VCE= 3V, IC= 0.5A IC= 2A, IB= 0.2A VCE= 5V, IE= -0.5A VCB= 10V, f = 1MHz, IE= 0A Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only. Notice 2) The contents described herein are subject to change without notice. PHENITEC SEMICONDUCTOR Corp. No. D5023-20080917 - 1/2 Free Datasheet http://www.datasheetlist.com/ D5023 Fig.1 IC - VBE(on) at VCE= 3V, Ta= 25C 10 Collector current : IC (A) 1000 DC current gain : hFE 1 0.1 0.01 0.001 0.5 0.7 0.9 1.1 Base-emitter on voltage : ...