SI4814DY

Si4814DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 FEATURES rDS(on) (W) 0.021 @ VGS = 10 V 0.0325 @ VGS = 4.5 V 0.020 @ VGS = 10 V 0.0265 @ VGS = 4.5 V ID (A) 7.0 5.6 7.4 6.4 D LITTLE FOOTr Plus Integrated Schottky D Alternative Pinning for Additional Layout Options D 100% Rg Tested APPLICATIONS D DC/DC Converters − Notebook D1 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 SO-8 D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: Si4814DY Si4814DY-T1 (with Tape and Reel) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 20 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State Steady State Unit V 7.0 5.6 40 1.7 1.9 1.2 5.5 4.3 1.0 1.1 0.71 −55 to 150 7.4 6 40 1.8 2.0 1.3 5.7 4.5 0.95 1.16 0.74 W _C A Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71685 S-32124—Rev. E,...