Power MOSFET
NTGD3149C
Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
Features
Power MOSFET
• • • • • •
Complementary N−Channel and...
Description
NTGD3149C
Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
Features
Power MOSFET
Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
http://onsemi.com
V(BR)DSS N−Ch 20 V P−Ch −20 V RDS(on) MAX 60 mW @ 4.5 V 90 mW @ 2.5 V 110 mW @ 4.5 V 145 mW @ 2.5 V ID MAX (Note 1) 3.5 A
Applications
−2.7 A
DC−DC Conversion Circuits Load/Power Switching with Level Shift
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current (N−Ch & P−Ch) TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ID Steady State t≤5s Steady State t≤5s Steady State t≤5s N−Ch P−Ch Symbol VDSS VGS ID Value 20 ±8 3.2 2.3 3.5 2.4 1.7 2.7 0.9 1.1 11 8.0 −55 to 150 0.8 260 °C A °C A W A Unit V V A
D1
S2
G1 S1 N−CHANNEL MOSFET
G2 D2 P−CHANNEL MOSFET
MARKING DIAGRAM
1 TSOP−6 CASE 318G STYLE 13 CC MG G 1
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
CC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)
PI...
Similar Datasheet