NTGD3147F Power MOSFET and Schottky Diode
Features
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6
Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
http://onsemi.com P−CHANNEL MOSFET
V(BR)DSS −20 V RDS(on) Max 145 mW @ −4.5 V 200 m...
