TTC5200

SEMICONDUCTOR TTC5200 Silicon NPN triple diffusion planar transistor 15A/230V/150W RoHS RoHS Nell High Power Products 20.00±0.20 18.00 ø3.30 ± 0.20 5.00 3.00 2.00 9.00 4.00 6.00 20.50 26.00 TO-3PL 3.00 2.50 (typ.) FEATURES High-speed switching High collector-emitter voltage: VCEO = 230V(min) Complementary to TTA1943 TO-3PL package which can be installed to the heat sink with one screw 1.00 (typ.) 2.50 0.60 5.45 ± 0.05 3.20 5.45 ± 0.05 1 2 3 1. BASE 2. COLLECTOR (HEAT SINK) C APPLICATIONS Power amplifier Recommended for 100W high-fidelity audio frequency amplifier output stage 3. EMITTER B E PNP All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO V CEO V EBO IC I CP IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current, tp ≤ 5ms Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C VALUE 230 230 5 15 A 30 1.5 150 150 ºC -55 to 150 W V UNIT www.nellsemi.com Page 1 of 3 SEMICONDUCTOR TTC5200 RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL ICBO I EBO V (BR)CEO V CBO V EBO h FE PARAMETER Collector cutoff current Emitter cutoff current Collector to emitter breakdown voltage Collector to base voltage Emitter to base voltage Forward current transfer ratio (DC current gain) Collector to emitter voltage Base to emitter voltage Transition frequency Collector output cap...