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G30N60A4D

Part Number	G30N60A4D
Manufacturer	Fairchild Semiconductor
Description	SMPS Series N-Channel IGBT
Published	Mar 6, 2014
Detailed Description	HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N6...
Datasheet	G30N60A4D PDF File

Overview

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49343.
The diode used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has b...

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G30N60A4D SMPS Series N-Channel IGBT - Fairchild Semiconductor

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