N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
SSM9918H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance Capable of 2.5V gate drive Low drive current Surfac...
Description
SSM9918H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package
D
BV DSS R DS(ON) ID
20V 14mΩ 45A
G S
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 20 ± 12 45 20 140 48 0.38 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.6 110 Unit ℃/W ℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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SSM9918H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 26 19 1.5 10.5 7.5 83 18 23 500 310 125
Max. Units 14 28 1.2 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-S...
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