BSS138AKA

BSS138AKA 6 February 2013 SO T2 3 60 V, single N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C 2 Conditions Tj = 25 °C Min -20 [1] Typ - Max 60 20 200 Unit V V mA - Static characteristics drain-source on-state resistance [1] - 2.7 4.5 Ω Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet-pdf.com/ NXP Semiconductors BSS138AKA 60 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Package Name BSS138AKA TO-236AB Description plastic surface-mounted packag...