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MDB10S Dataheets PDF



Part Number MDB10S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Single-Phase Bridge Rectifiers
Datasheet MDB10S DatasheetMDB10S Datasheet (PDF)

MDB6S / MDB8S / MDB10S — 1 A, MicroDIP, Single-Phase Bridge Rectifiers October 2013 MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • Low Package Profile: 1.60 mm (max) • Small Area Requirements: 35 mm2 • Efficient VF - 0.935 V (Typ) at 1 A - 1.165 V (Typ) at 5 A • IF(AV) = 1.0 A • IFSM = 30 A • Glass Passivated Junctions • RoHS Compliant • Halogen Free • UL Certification: E352360 Description With the ever pressing need to improve power supply efficiency and reli.

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MDB6S / MDB8S / MDB10S — 1 A, MicroDIP, Single-Phase Bridge Rectifiers October 2013 MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • Low Package Profile: 1.60 mm (max) • Small Area Requirements: 35 mm2 • Efficient VF - 0.935 V (Typ) at 1 A - 1.165 V (Typ) at 5 A • IF(AV) = 1.0 A • IFSM = 30 A • Glass Passivated Junctions • RoHS Compliant • Halogen Free • UL Certification: E352360 Description With the ever pressing need to improve power supply efficiency and reliability, the MDBxS family is focused on offering a best in class small form factor combined with best in class efficient rectifier performance. The “S” family offers industry leading balance of efficiency, size, and cost. They offer designers improved efficiency by achieving an industry leading VF of 0.935 V Typ. at 1 A 25 °C, and a VF of 1.165 V Typ. at 5 A 25 °C. These lower VF values offer roughly a 5% efficiency improvement over measured competitive same form factor devices. This lower VF vs. competitive devices results in cooler and more efficient power supply operation. The design supports a 30 A IFSM rating to absorb high surge currents and offers rated breakdown voltages up to 1000 V. Finally, the MDBxS family achieves all this in a small form factor micro-dip package - offering a max height of 1.6 mm, and requiring only 35 mm2 of board space. + - Micro DIP Ordering Information Part Number MDB6S MDB8S MDB10S Marking MDB6S MDB8S MDB10S Package Micro DIP Packing Method Tape and Reel © 2010 Fairchild Semiconductor Corporation MDB6S / MDB8S / MDB10S Rev. 1.2.1 1 www.fairchildsemi.com Free Datasheet http://www.datasheet-pdf.com/ MDB6S / MDB8S / MDB10S — 1 A, MicroDIP, Single-Phase Bridge Rectifiers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VRRM VRMS VDC IF(AV) IFSM I t TJ TSTG 2 Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Average Rectified Forward Current (1) Peak Forward Surge Current (2) I2t Rating for fusing (t < 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Value MDB6S 600 420 600 MDB8S 800 560 800 1.0 30 3.735 -55 to +150 -55 to +150 MDB10S 1000 700 1000 Units V V V A A A2 S °C °C Notes: 1. 60 Hz sine wave, R-load, TA = 25°C on FR-4 PCB. 2. 60 Hz sine wave, Non-repetitive 1 cycle peak value, TJ = 25°C. Thermal Characteristics(3) Symbol RθJA ψJL Note: 3. Device mounted on FR-4 PCB with board size = 76.2 mm x 114.3 mm (JESD51-3 standards). Parameter Measurement with Dual Dice Thermal Resistance, Junction-Ambient Measurement with Single Die Measured at Anode pin Thermal Characterization, Junction to Lead Measured at Cathode pin Typ. 250 150 57 15 Units °C/W °C/W °C/W °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise specified. Symbol VF IR CJ Parameter Maximum Forward Voltage Maximum Reverse Current Typical Junction Capacitance Test condition IF = 1 A, Pulse measurement, Per diode At VRRM, Pulse measurement, Per diode VR = 4 V, f = 1 MHz Value 1.1 10 10 Units V μA pF © 2010 Fairchild Semiconductor Corporation MDB6S / MDB8S / MDB10S Rev. 1.2.1 2 www.fairchildsemi.com Free Datasheet http://www.datasheet-pdf.com/ MDB6S / MDB8S / MDB10S — 1 A, MicroDIP, Single-Phase Bridge Rectifiers Typical Performance Characteristics 1.4 1.2 1000 1.0 Reverse Current, IR [nA] Forward Voltage, VF [V] TA=-55 C o TA=25 C o TA=150 C o 100 TA=125 C o 0.8 0.6 TA=85 C 0.4 o TA=125 C o TA=150 C o 10 TA=85 C o TA=25 C o 1 TA=-55 C o 0.2 0.1 1 10 20 40 60 80 100 120 0.0 0.1 Forward Current, IF [A] Percent of Rated Peak Reverse Voltage [%] Figure 1. Forward Voltage vs Forward Current (Per diode) Figure 2. Typical Reverse Current Characteristics (Per Diode) 100 f = 1MHz 90 Total Capacitance, CT [pF] 80 70 60 50 40 30 20 0 1 2 3 4 5 6 7 Reverse Voltage, VR [V] Figure 3. Total Capacitance © 2010 Fairchild Semiconductor Corporation MDB6S / MDB8S / MDB10S Rev. 1.2.1 3 www.fairchildsemi.com Free Datasheet http://www.datasheet-pdf.com/ MDB6S / MDB8S / MDB10S — 1 A, MicroDIP, Single-Phase Bridge Rectifiers Physical Dimension Micro-DIP Figure 4. 4-LEAD, MIRCRO SURFACE MOUNT, 1.3 x 4 x 5 mm (Active) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide t.


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