SSM6J501NU

SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSⅥ) SSM6J501NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(ON) = 43.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 19.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 15.3 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS −20 V Gate-Source voltage VGSS ±8 V Drain current DC ID −10 A Pulse IDP (Note 1) −30 Power dissipation PD(Note 2) 1 W t≦10s 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 1,2,5,6: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in UDFN6B 3: Gate 4: Source temperature, etc.) may cause this product to decrease in the JEDEC ― reliability significantly even if the operating conditions (i.e. JEITA ― operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-2AA1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Weight: 8.5 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The pulse width limited by max channel temperature. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pa...