HE9014

HI-SINCERITY MICROELECTRONICS CORP. HE9014 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6102 Issued Date : 1992.08.25 Revised Date : 2005.02.04 Page No. : 1/5 Description The HE9014 is designed for use in pre-amplifier of low level and low noise. Features High Total Power Dissipation (PD: 450mW) Complementary to HE9015 High hFE and Good Linearity TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 450 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .......