HE8050S

HI-SINCERITY MICROELECTRONICS CORP. HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2001.07.18 Page No. : 1/4 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 25 V VCEO Collector to Emitter Voltage ..................................................................................... 20 V VEBO Emitt...