DatasheetsPDF.com
MDS9651
Complementary N-P Channel Trench MOSFET
Description
MDS9651– Complementary N-P Channel Trench MOSFET MDS9651 Complementary N-P Channel Trench MOSFET General Description The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON) <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V ...
MagnaChip
Download MDS9651 Datasheet
Similar Datasheet
MDS9651
Complementary N-P Channel Trench MOSFET
- MagnaChip
MDS9652E
N-P Channel Trench MOSFET
- MagnaChip
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
