Document
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
NAND Flash Memory
MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4, MT29F16G08AJADAWP Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks • Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 25ns (1.8V) • Array performance – Read page: 25µs 3 – Program page: 200µs (TYP: 1.8V, 3.3V)3 – Erase block: 700µs (TYP) • Command set: ONFI NAND Flash Protocol • Advanced command set – Program page cache mode4 – Read page cache mode 4 – One-time programmable (OTP) mode – Two-plane commands 4 – Interleaved die (LUN) operations – Read unique ID – Block lock (1.8V only) – Internal data move • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion • WP# signal: Write protect entire device • First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management. • Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000 • RESET (FFh) required as first command after power-on • Alternate method of device initialization (Nand_Init) after power up (contact factory) • Internal data move operations supported within the plane from which data is read • Quality and reliability – Data retention: 10 years – Endurance: 100,000 PROGRAM/ERASE cycles • Operating voltage range – VCC: 2.7–3.6V – VCC: 1.7–1.95V • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 48-pin TSOP type 1, CPL 2 – 63-ball VFBGA
Notes: 1. The ONFI 1.0 specification is available at www.onfi.org. 2. CPL = Center parting line. 3. See Program and Erase Characteristics for tR_ECC and tPROG_ECC specifications. 4. These commands supported only with ECC disabled.
PDF: 09005aef83b25735 m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
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Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved.
Free Datasheet http://www.datasheet-pdf.com/
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart
MT 29F 4G 08 Micron Technology Product Family
29F = NAND Flash memory
A
B
A
D
A WP
IT
ES
:D Design Revision (shrink) Production Status
Blank = Production ES = Engineering sample MS = Mechanical sample QS = Qualification sample
Density
4G = 4Gb 8G = 8Gb 16G = 16Gb
Special Options
Blank X = Product longevity program (PLP)
Device Width
08 = 8-bit 16 = 16-bit
Operating Temperature Range
Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C)
Level
A = SLC
Classification
Mark Die B D J 1 2 4 nCE 1 1 2 RnB 1 1 2 I/O Channels 1 1 1
Speed Grade
Blank
Package Code
WP = 48-pin TSOP 1 HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) H4 = 63-ball VFBGA (9 x 11 x 1.0mm)
Operating Voltage Range
A = 3.3V (2.7–3.6V) B = 1.8V (1.7–1.95V)
Interface
A = Async only
Feature Set
D = Feature set D
PDF: 09005aef83b25735 m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved.
Free Datasheet http://www.datasheet-pdf.com/
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
Contents
General Description ......................................................................................................................................... 8 Signal Descriptions ........................................................................................................................................... 8 Signal Assignments ........................................................................................................................................... 9 Package Dimensions ....................................................................................................................................... 12 Architectur.