BD750

isc Silicon PNP Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A ·High Power Dissipation ·Complement to Type BD751/751A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD750 -100 VCEV Collector-Emitter Voltage V BD750A -130 BD750 -90 VCEO(SUS) Collector-Emitter Voltage V BD750A -120 VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -20 A IB Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W BD750/750A isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD750/750A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD750 BD750A IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD750 IC= -7.5A; IB= -0.75A BD750A IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage BD750 IC= -7.5A; IB= -0.75A BD750A IC= -5A; IB= -0.5A ICEV Collector Cutoff Current BD750 VCEV= -100V;VBE(off)= -1.5V BD750A VCEV= -130V;VBE(off)= -...