Ordering number:EN3702A
NPN Triple Diffused Planar Silicon Transistor
2SC4633
1200V/30mA High-Voltage Amplifier, High-V...
Ordering number:EN3702A
NPN Triple Diffused Planar Silicon
Transistor
2SC4633
1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=1200V). · Small Cob (typical Cob=2.0pF). · Full-isolation package. · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2079B
[2SC4633]
10.0 3.2
4.5 2.8
3.5
7.2
16.0
0.6
16.1 3.6
0.9
1.2
0.7
14.0
0.75 1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.55
2.55
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO IEBO hFE
fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
VCB=1200V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1.5mA VCE=10V, IC=1.5mA IC=3mA, IB=0.6mA IC=3mA, IB=0.6mA IC=100µA, IE=0 IC=1mA, RBE=∞ IE=100µA, IC=0
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS)
Ratings
Unit
1500 V
1200 V
5V
30 mA
100 mA
2W
150 ˚C
–55 to +150 ˚C
Ratings
min
typ
10 6
1500 1200
5
max 1 1
60
5 2
U...