N-Chanel Power MOSFET
ANA2N65B, ANP2N65B, ANB2N65B, AND2N65B, ANI2N65B, ANU2N65B Rdson=5,0 , Vds=650 V, Qg(tot)=8 nC Applications
SMPS PFC
Features
Low Qg Low Rdson RoHS compliant
1 Gate 2 Drain 3 Source
Table 1. Device summary
Part numbers ANA2N65B ANP2N65B ANB2N65B AND2N65B ANI2N65B ANU2N65B Marking A2N65B P2N65B B2N65B D2N65B I2N65B I2N65B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK Value
TO-220FP TO-220 D²PAK I2PAK DPAK IPAK
2
Packaging Tube Tube Tape and reel Tape and reel Tape and reel Tape and reel Units
Table 2. Absolute Maximum Ratings
Symbol ID ID IDM(1) VGS PD Parameter Drain current (continuous), VGS= at TC = 25°C Drain current (continuous), VGS= at TC = 100°C Drain current (pulsed) at TC = 25°C Gate-source voltage Maximum Power Dissipation at TC = 25°C Maximum Power Dissipation at TC = 100°C Storage temperature Operating junction temperature Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
2,0 ― 8,0 ±20 23 54 ― -55 … +150 -55 … +150 260 1,13
Value
TO-220FP TO-220 D²PAK I PAK
2
A A A V
44
W W
Tstg Tj TL
°C
―
N·m Value
DPAK IPAK
Table 3. Thermal resistance
Symbol Rthj-case Rthj-amb Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max
5,5 62,5
2,32
2,87 50
°C/W °C/W
1
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N-Chanel Power MOSFET
Table 4. Electrical Characteristics of the MOSFET
Symbol Parameter Min. Typ. Max. Units Conditions VGS = 0V, ID = 250μA ID = 250 μA, Referenced to 25°C VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250μA Ref. Fig
Off Characteristics
V(BR)DSS V(BR)DSS/TJ
Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current
650 0,4 10 ±100
V V/°C µA nA
IDSS IGSS
On Characteristics
VGS(th) VGS(th)/ TJ RDS(on) gfs Ciss Coss Crss Qg(tot) Qgs Qgd td(on) tr td(off) tf
Gate Threshold Voltage Threshold Voltage temp. coefficient Static Drain to Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
2,0 ―
4,0
V mV/° C
5,0 ―
Ω S pF pF pF nC nC nC ns ns ns ns
VGS = 10V, ID =1A
Dynamic Characteristics
270 40 5 9,0 1,6 4,3
Switching Characteristics
VDS =25V, VGS =0V, f =1MHz
VDS=480V, VGS=10V, ID=2.4A
10 25 20 25
VDD =300V, ID =2.4A, RG=25Ω
Table 5. Avalanche Characteristic
Symbol EAS EAR VDS(Avalanche) IAR Parameter Single Pulse Avalanche Energy Repetitive Avalanche Energy Repetitive Avalanche Voltage Avalanche Current Typ. Max. Units mJ mJ V A Conditions Ref.Fig
140 4,5 ― 2,0
2
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N-Chanel Power MOSFET
Table 6. Source drain diode
Symbol VSD IS ISM trr Qrr Parameter Diode Forward Voltage Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units V A A ns nC VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs Conditions VGS = 0 V, ISD = 2.0 A Ref.Fig
1,4 2,0 8,0 180 0,72
3
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N-Chanel Power MOSFET
TO-220FP
4
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N-Chanel Power MOSFET
TO-220
5
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N-Chanel Power MOSFET
D2PAK
6
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N-Chanel Power MOSFET
DPAK
7
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N-Chanel Power MOSFET
I2PAK
8
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N-Chanel Power MOSFET
IPAK
Proezd № 4806, Bld 4/3, Zelenograd, Moscow, Russia, 124460 Tel: +7(499)731-4906; +7(499)731-3270; Fax: +7(400)731-1508 E-mail:
[email protected]; Web: www.angstrem.ru
9
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