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ANP2N65B Dataheets PDF



Part Number ANP2N65B
Manufacturers Angstrem
Logo Angstrem
Description N-Chanel Power MOSFET
Datasheet ANP2N65B DatasheetANP2N65B Datasheet (PDF)

N-Chanel Power MOSFET ANA2N65B, ANP2N65B, ANB2N65B, AND2N65B, ANI2N65B, ANU2N65B Rdson=5,0 , Vds=650 V, Qg(tot)=8 nC Applications      SMPS PFC Features Low Qg Low Rdson RoHS compliant 1 Gate 2 Drain 3 Source Table 1. Device summary Part numbers ANA2N65B ANP2N65B ANB2N65B AND2N65B ANI2N65B ANU2N65B Marking A2N65B P2N65B B2N65B D2N65B I2N65B I2N65B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK Value TO-220FP TO-220 D²PAK I2PAK DPAK IPAK 2 Packaging Tube Tube Tape and reel Tape and reel T.

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N-Chanel Power MOSFET ANA2N65B, ANP2N65B, ANB2N65B, AND2N65B, ANI2N65B, ANU2N65B Rdson=5,0 , Vds=650 V, Qg(tot)=8 nC Applications      SMPS PFC Features Low Qg Low Rdson RoHS compliant 1 Gate 2 Drain 3 Source Table 1. Device summary Part numbers ANA2N65B ANP2N65B ANB2N65B AND2N65B ANI2N65B ANU2N65B Marking A2N65B P2N65B B2N65B D2N65B I2N65B I2N65B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK Value TO-220FP TO-220 D²PAK I2PAK DPAK IPAK 2 Packaging Tube Tube Tape and reel Tape and reel Tape and reel Tape and reel Units Table 2. Absolute Maximum Ratings Symbol ID ID IDM(1) VGS PD Parameter Drain current (continuous), VGS= at TC = 25°C Drain current (continuous), VGS= at TC = 100°C Drain current (pulsed) at TC = 25°C Gate-source voltage Maximum Power Dissipation at TC = 25°C Maximum Power Dissipation at TC = 100°C Storage temperature Operating junction temperature Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 2,0 ― 8,0 ±20 23 54 ― -55 … +150 -55 … +150 260 1,13 Value TO-220FP TO-220 D²PAK I PAK 2 A A A V 44 W W Tstg Tj TL °C ― N·m Value DPAK IPAK Table 3. Thermal resistance Symbol Rthj-case Rthj-amb Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max 5,5 62,5 2,32 2,87 50 °C/W °C/W 1 Free Datasheet http://www.datasheet-pdf.com/ N-Chanel Power MOSFET Table 4. Electrical Characteristics of the MOSFET Symbol Parameter Min. Typ. Max. Units Conditions VGS = 0V, ID = 250μA ID = 250 μA, Referenced to 25°C VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250μA Ref. Fig Off Characteristics V(BR)DSS V(BR)DSS/TJ Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current 650 0,4 10 ±100 V V/°C µA nA IDSS IGSS On Characteristics VGS(th) VGS(th)/ TJ RDS(on) gfs Ciss Coss Crss Qg(tot) Qgs Qgd td(on) tr td(off) tf Gate Threshold Voltage Threshold Voltage temp. coefficient Static Drain to Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2,0 ― 4,0 V mV/° C 5,0 ― Ω S pF pF pF nC nC nC ns ns ns ns VGS = 10V, ID =1A Dynamic Characteristics 270 40 5 9,0 1,6 4,3 Switching Characteristics VDS =25V, VGS =0V, f =1MHz VDS=480V, VGS=10V, ID=2.4A 10 25 20 25 VDD =300V, ID =2.4A, RG=25Ω Table 5. Avalanche Characteristic Symbol EAS EAR VDS(Avalanche) IAR Parameter Single Pulse Avalanche Energy Repetitive Avalanche Energy Repetitive Avalanche Voltage Avalanche Current Typ. Max. Units mJ mJ V A Conditions Ref.Fig 140 4,5 ― 2,0 2 Free Datasheet http://www.datasheet-pdf.com/ N-Chanel Power MOSFET Table 6. Source drain diode Symbol VSD IS ISM trr Qrr Parameter Diode Forward Voltage Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units V A A ns nC VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs Conditions VGS = 0 V, ISD = 2.0 A Ref.Fig 1,4 2,0 8,0 180 0,72 3 Free Datasheet http://www.datasheet-pdf.com/ N-Chanel Power MOSFET TO-220FP 4 Free Datasheet http://www.datasheet-pdf.com/ N-Chanel Power MOSFET TO-220 5 Free Datasheet http://www.datasheet-pdf.com/ N-Chanel Power MOSFET D2PAK 6 Free Datasheet http://www.datasheet-pdf.com/ N-Chanel Power MOSFET DPAK 7 Free Datasheet http://www.datasheet-pdf.com/ N-Chanel Power MOSFET I2PAK 8 Free Datasheet http://www.datasheet-pdf.com/ N-Chanel Power MOSFET IPAK Proezd № 4806, Bld 4/3, Zelenograd, Moscow, Russia, 124460 Tel: +7(499)731-4906; +7(499)731-3270; Fax: +7(400)731-1508 E-mail: [email protected]; Web: www.angstrem.ru 9 Free Datasheet http://www.datasheet-pdf.com/ .


ANA2N65B ANP2N65B ANB2N65B


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