isc Silicon PNP Power Transistor
2SB630
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·Comp...
isc Silicon
PNP Power
Transistor
2SB630
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·Complement to Type 2SD610 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency power amplifier applications. ·Suitable for driver of 200~300 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3.0
A
1.5 W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -5mA; VCE= -10V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -10V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V
hFE-2 Classifications
S
R
Q
40-80 60-120 100-200
2SB630
MIN TYP. MAX UNIT
-1.0 V
-...