25N60N

FCH25N60N — N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ Features RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) 100% Avalanche Tested RoHS Compliant Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Application Solar Inverter AC-DC Power Supply D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation - Derate Above 25oC (TC = 25oC) (Note 3) - Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) - Continuous (TC = 25oC) FCH25N60N 600 ±30 25 16 75 861 8.3 2.2 100 20 216 1.72 -55 to +150 300 Unit V V A A mJ A mJ V/ns W...