D600K

·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION: Low Frequency Power Amplifier Applications. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power Dissipation(Ta=25℃) Power Dissipation(Tc=25℃) D600k —NPN silicon — SYMBOL RATING UNIT VCBO VCEO VEBO IC PC PC TJ Tstg 120 120 5 1 1 8 150 V V V A W W ℃ 1 TO-126 2.Collector 3.Base 1. Emitter Junction Temperature Storage Temperature Range -55~150 ℃ ■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER Common Emitter DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain bandwidth product Output Capacitance Fall Time Turn-off Time Storage Time SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION hFE1 hFE2 ICBO IEBO BVCBO BVCEO BVEBO VCE(sat) VBE(sat) fT Cob tf toff tstg 60 20 320 1 1 120 120 5 0.15 0.4 0.85 1.2 130 20 100 500 700 50 μA μA V V V V V MHz pF ns VCE= 12V,PW=20μs ns IC=10IB1=-10IB2= 500 mA ns VCE= 5V，IC= 50mA VCE= 5V，IC= 500mA VCB= 50V，IE=0 VEB= 4V，IC=0 IC= 0.01mA，IE=0 IC= 1mA，IB=0 IE= 0.01mA，IC=0 IC= 500mA，IB= 50mA IC= 500mA，IB= 50mA IC= 50mA，VCE= 10V VCB= 10V, IE=0, f = 1MHz ■■hFE Classification Classification hFE1 D 60~120 E 100~200 F 160~320 Free Datasheet http://www.datasheet-pdf.com/ ...