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B1116

NEC
Part Number B1116
Manufacturer NEC
Description 2SB1116
Published Feb 23, 2014
Detailed Description DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MI...
Datasheet PDF File B1116 PDF File

B1116
B1116

Overview
DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.
20 V TYP.
(IC = −1.
0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.
75 W, VCEO = −50/−60 V, IC(DC) = −1.
0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.
...


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