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B1116 Dataheets PDF



Part Number B1116
Manufacturers NEC
Logo NEC
Description 2SB1116
Datasheet B1116 DatasheetB1116 Datasheet (PDF)

DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector c.

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DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.0 −1.0 −2.0 0.75 150 −55 to +150 * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit V V V A A W °C °C Parameter Symbol Conditions Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Turn-on time Storage temperature Fall time ICBO IEBO hFE1 ** hFE2 ** VBE ** VCE(sat) ** VBE(sat) ** Cob fT ton tstg tf VCB = −60 V, IE = 0 VEB = −6.0 V, IC = 0 VCE = −2.0 V, IC = −100 mA VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −50 mA IC = −1.0 A, IB = −50 mA IC = −1.0 A, IB = −50 mA VCB = −10 V, IE = 0, f = 1.0 MHz VCE = −2.0 V, IC = −100 mA VCC = −10 V, IC = −100 mA IB1 = −IB2 = −10 mA, VBE(off) = 2 to 3 V ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% PACKAGE DRAWING (UNIT: mm) 2SB1116, 1116A MIN. 135 81 −600 70 TYP. MAX. −100 −100 600/400 −650 −0.20 −0.9 25 120 0.07 0.70 0.07 −700 −0.3 −1.2 Unit nA nA mV V V pF MHz µs µs µs The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16195EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 21090928 hFE CLASSIFICATION (The U rank is not available for the 2SB1116A.) Marking hFE1 L 135 to 270 K 200 to 400 U 300 to 600 2SB1116, 1116A 2 Data Sheet D16195EJ1V0DS TYPICAL CHARACTERISTICS (Ta = 25°C) 2SB1116, 1116A Data Sheet D16195EJ1V0DS 3 2SB1116, 1116A 4 Data Sheet D16195EJ1V0DS [MEMO] 2SB1116, 1116A Data Sheet D16195EJ1V0DS 5 2SB1116, 1116A • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written con.


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